6
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
TYPICAL CHARACTERISTICS
45
45
65
20
25_C
TC
=--30_C
85_C
30 4035
25
55
50
Pin, INPUT POWER (dBm) PEAK
Figure 10. Output Power versus Input Power
P
out
, OUTPUT POWER (dBm)
60
27
10
10
80
100
25
23
21
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
24
22
20
1000 2000
25_C
TC
=--30_C
85_C
20
26
Gps
VDD
=50Vdc
IDQ
= 150 mA
f = 130 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
VDD
=50Vdc
IDQ
= 150 mA
f = 130 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
250
108
110
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Transient Thermal Impedance
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
VDD
=50Vdc
Pout
= 1000 W CW
ηD
= 72%
0.18
RECTANGULAR PULSE WIDTH (S)
Z
θ
JC
, THERMAL IMPEDANCE (
°
C/W)
0.00001
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.0001 0.001 0.01 0.1
TC
= Case Temperature
ZθJC
= Thermal Impedance (from graph)
PD
= Peak Power Dissipation
t1
= Pulse Width; t2
=PulsePeriod
D=DutyFactor=t1/t2
TJ
(peak) = PD
*ZθJC
+TC
t2
t1
PD
D=0.7
D=0.5
D=0.3
D=0.1
Figure 13. MTTF versus Junction Temperature -- CW
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at freescale.com/RFpower. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
For Pulse applications or CW conditions, use the MTTF calculator
referenced above.
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